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| AO7402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO7402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. Standard Product AO7402 is Pb-free (meets ROHS & Sony 259 specifications). AO7402L is a Green Product ordering option. AO7402 and AO7402L are electrically identical. SC-70 (SOT-323) Top View G D S G S Features VDS (V) = 20V ID = 1.6 A (V GS = 4.5V) RDS(ON) < 90m (VGS = 4.5V) RDS(ON) < 105m (VGS = 2.5V) RDS(ON) < 130m (VGS = 1.8V) D Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 8 1.6 1.2 10 0.35 0.22 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 300 340 280 Max 360 425 320 Units C/W C/W C/W Alpha Omega Semiconductor, Ltd. AO7402 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=1.6A TJ=125C 0.4 10 75 106 86 103 5.5 0.69 90 130 105 130 1 0.5 458 76 54 3 6.05 0.7 1.45 7.3 5.6 40 11 12.2 3.23 0.55 Min 20 1 5 100 0.8 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC gFS VSD IS VGS=2.5V, ID=1.5A VGS=1.8V, ID=1.4A Forward Transconductance VDS=5V, ID=1.6A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=1.6A VGS=5V, VDS=10V, RL=6.25, RGEN=6 IF=1.6A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=1.6A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO7402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 8V 10 4.5V 8 2V ID(A) 3V 2.5V 6 4 4 VGS=1.5V 2 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 VDS (Volts) Fig 1: On-Region Characteristics 140 Normalized On-Resistance 1.6 VGS=2.5V 1.4 ID=1.6A VGS=4.5V 1.2 VGS=1.8V VGS(Volts) Figure 2: Transfer Characteristics VDS=5V 25C 125C 12 ID (A) 8 0 120 RDS(ON) (m) VGS=1.8V 100 VGS=2.5V 80 VGS=4.5V 60 0 2 4 6 8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 RDS(ON) (m) 120 125C 100 25C 80 60 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=1.6A 1E-01 IS (A) 1E-02 25C 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics 125C Alpha & Omega Semiconductor, Ltd. AO7402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=1.6A 800 Capacitance (pF) 600 Ciss 400 200 Coss Crss 0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C 16 100s 12 10s 0.1s 10ms 1ms Power (W) TJ(Max)=150C TA=25C ID (Amps) 10.0 R DS(ON) limited 8 1.0 1s 10s 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 4 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=360C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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